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Power electronics play an important role in electricity utilization from generation to end customers. Thus, high-efficiency power electronics help to save energy and conserve energy resources. Research on silicon carbide (SiC) power electronics has shown their better efficiency compared to Si power electronics due to the significant reduction in both conduction and switching losses. Combined with...
Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing...
The purpose of this work is to provide validated models to estimate the performance of a SiC-based converter as a utility interface in battery systems. System design and modeling are described in detail. Simulations are done for both a SiC JFET converter and its Si counterpart based on the quality of tested devices. The simulation results indicate that in both charging and discharging modes, the SiC...
Silicon carbide (SiC) unipolar devices have much higher breakdown voltages because of the ten times greater electric field strength of SiC compared with silicon (Si). 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. Four commercially available SiC Schottky diodes at different voltage and current ratings, an experimental VJFET,...
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