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We compare two extraction methods based on the Y-function technique to extract the massive (>100kΩ) series resistance observed in SOI-MOSFET devices. A part the application of these methods for such high series resistance, the novelty in this paper is that our methods are based on the IDS−VGS characteristics measured for several drain voltages in the linear domain, while the classic methods are...
The electrical characteristics of two kinds of n-type SOI-MOSFETs are analyzed and compared in order to build a consistent model. The first kind is an Ultra-Thin Body (UTB) device for which the channel thickness is equal to the initial SOI wafer thickness value (here 46nm). The second kind is what we refer to Nano-Scale Body (NSB) device for which the initial SOI channel is thinned down to 1.6nm using...
In this paper, we evaluate the throughput performance of Hybrid Automatic ReQuest (HARQ) type II and type III over multipath fading channels for Direct Sequence Spread Spectrum Systems (DS-SSS). The study is performed in two extreme scenarios with either a constant or a packet-by-packet independent channel between the different transmissions.
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