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A novel SiGe HBT low noise amplifier (LNA) was designed by adopting the feedback resistors, which are low cost and implemented easily in VLSI technology. Due to the absence of on-chip spiral inductor, the die area of this novel LNA decreases noticeably. The novel resistive feedback structure of the LNA comprising a shunt feedback loop and a series feedback loop, wherein the shunt feedback loop is...
To adapt to the rapid development of multi-standard mobile communication, a low noise amplifier (LNA) that can operate at two frequencies of 800MHz and 1.8GHz respectively was designed. SiGe HBTs with good noise performance were used in the design. The Cascode circuit topology was adopted to reduce the Miller effect of the transistor. Inductor degeneration in emitter was introduced to decouple the...
This paper presents an inductorless SiGe HBT low noise amplifier (LNA) using JAZZ 0.35 ??m SiGe BiCMOS technology. The LNA is designed with multiple resistive feedback structure. In addition, peaking capacitors at both emitters were adopted to compensate for the gain rolloff at higher frequency. The results of simulation show that the LNA has over 22.3 dB gain with less than 1 dB variation, noise...
This paper presents a SiGe HBT low noise amplifier (LNA) using resistive feedback scheme for ultra-wideband (UWB) applications. This amplifier is implemented in 0.35 um SiGe process and is unconditionally stable. The simulated results show the LNA has over 21 dB gain with less than 1 dB variation over 3-10 GHz. The matched input and output reflection are all less than -10 dB. The noise figure is 4...
Considering the noise correlation term between collector and base current shot noise, there mainly are four noise parameter models of SiGe HBTs, including the unified noise model (UNI), two SPICE noise models (SPN1, SPN2), the thermodynamic noise model (TDN). A comparison of these models was investigated in this work. A SiGe HBT based on BiCMOS process was fabricated and its S-parameters and Minimum...
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