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The aim purpose of this study is to evaluate the ESD protection using BIMOS transistor in the RF and fast swing application for advanced CMOS technology in 32 nm high k metal gate & bulk substrate. The ESD target is 1kV HBM and the RF one is 100 GHz broadband. Moreover the DC behavior is also performed. Thus, the challenge here is to be efficient in ESD protection with a minimum of parasitic capacitance...
Electrostatic Discharge (ESD) protection for advanced CMOS technologies is a challenge due to down-scaling which introduces a reduction of the intrinsic robustness. Moreover, another challenge is the RF ESD protection in analogue IO pad. Thus, when you merge both topics the challenges are major. This paper shows a methodology, tools and silicon measurements of ESD RF parasitic capacitance in C65nm...
The present paper provides an introduction to the concepts and hints used to layout PCBs (printed circuit boards) with good SI (signal integrity) and EMI (electromagnetic interference) control when designing RF (radio frequency), analog and digital electronic circuits, within the same PCB. This document also analyses the problem of getting good SI and EMI performance in dense populated PCBs with mixed...
The present paper provides a review of the main concepts and principles involved in mixed PCBs (printed circuit board) design for electronic devices with mixed technologies, i.e. analog, RF (radio frequency) and digital components within the same PCB, such as characteristic impedance, layer stack-up and shielding.
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