The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on the practical implementation of an angularly resolved ellipsometric optical sensing scheme based on Bloch surface waves sustained by tantala/titania/silica multilayers. The angular resolution is obtained by a focused illumination at fixed wavelength and detecting the angular reflectance spectrum by means of a CMOS array detector. The experimental results, obtained by using one tantala/titania/silica/multilayer...
Thin erbium implanted silicon rich oxides films have been used as active layer in light emitting devices. Electroluminescence has been observed and analyses as a function of the silicon content.
Power efficiency of silicon nanocrystal light-emitting devices is studied in pulsed regime. A phenomenological opto-electrical model is proposed to explain the frequency dependent electroluminescencewhich has been found.
High efficiency of silicon nanocrystal based devices is shown through energy-band gap engineering of the nanocrystal ensemble. By using bipolar tunneling, improved electrical and opto-electronic stabilities after long storage time and under aging experiments are demonstrated.
Solar cells with different silicon nanostructures have been fabricated on quartz wafers. A correlation between their photovoltaic properties and the conductivity was clearly found. The best results are achieved for amorphous silicon based nanostructures.
Bipolar (electrons and holes) charge injection, the onset voltages of electroluminescence as low as 1.4 V, and power efficiency of around 0.2% are demonstrated in thin nanocrystalline-Si/SiO2 multilayer LEDs grown by plasma-enhanced CVD.
Negative photo-conductivity, super linear variation of short circuit current with incident light power, and IR absorption have been observed in Si-rich oxynitride film containing silicon nanocrystals and the mechanism was discussed.
Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.
The effect of an injection barrier placed on top of a nanocrystalline-Si/SiO2 multilayered LED is discussed. Direct and alternating current injection schemes and time resolved electroluminescence are reported.
Electrical carrier injection into PECVD grown silicon-nanocrystals-based LEDs was examined by I-V, C-V, and impedance measurements. Electroluminescence was measured as a function of gate AC frequency. The correlations between conduction mechanism and electroluminescence are discussed.
Our investigation concerns measuring broadband dielectric permittivity and loss tangent of thin film high dielectric constant dielectric materials at microwave frequencies. The measurements are made in an APC-7 coaxial configuration where the test specimen represents a load terminating an air-filled coaxial transmission line. In contrast to conventional lumped capacitance approximations, the parallel...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.