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A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65 nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10 MHz up to 5 GHz. The front-end featuring two gain modes, achieves a voltage gain of 29 dB in the high voltage gain mode, and a voltage gain of 23 dB in the low voltage gain mode. The 3 dB bandwidth...
A novel, broadband, inductorless, multi- standard receiver front-end in a digital CMOS 90 nm low power (LP) process is described. The front-end operates in the frequency range from 0.8 GHz up to 1.7 GHz. It achieves a voltage gain of 24 dB and a noise figure of 5.5 dB. The measured IIP3 and IIP2 of the receiver are -13 dBm and +30 dBm, respectively. The input return loss is better than -10 dB in the...
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