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Using a physical and predictive 2-D confinement model considering the impact of source/drain coupling on the potential well, this work investigates the scalability of Ge and InGaAs multi-gate NMOSFETs by exploring a wide design space with various aspect ratio (AR). Our study indicates that, for a given subthreshold swing, multi-gate devices with InGaAs channel are more scalable than the Ge counterpart...
This work examines the electrostatic integrity for UTB GeOI and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that the QC effect improves the subthreshold swing of UTB devices. Since Ge, InGaAs, and Si channels exhibit different degree of quantum confinement due to different quantization...
This work investigates the impacts of quantum confinement on the short-channel effect and band-to-band-tunneling (BTBT) of UTB Ge and InGaAs NMOS devices using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that, when the channel thickness (Tch) is smaller than a critical value (Tch, crit), the quantum confinement effect may decrease the threshold...
In this work, we investigate the Vth variability of Si- and Ge-channel FinFET with various surface orientations using analytical solution of Schrδdinger equation. The theoretical model provides us a physical and efficient method to explore the impact of quantum-confinement effect. In addition, to validate the results predicted by the theoretical model, we also perform the 3-D atomistic simulation...
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