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In this paper, the characteristics of static random access memory (SRAM) cells based on three silicon-on-insulator (SOI) device structures are studied using device simulations. The comparative study, which is performed in a 32nm standard CMOS technology, includes read static noise margin (read SNM), read current, and standby power. The structures include SOI with ground plane in substrate (SOI-GPS),...
The effect of imaging pulse sequences on the perfusion model of hyperpolarized tracers and its influence on the quantitative assessment of blood perfusion were simulated and studied. Using three different singular value decomposition (SVD) based regularizations, including truncated SVD and first and second order Tikhonov, perfusion related parameters were calculated and compared. The simulation results...
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