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We investigate the mechanism of the gate leakage current in the Si/SiO2/HfO2/TiN stacks in a wide temperature range (6 - 400 K) by simulating the electron transport using a multi-phonon trap assisted tunneling model. Good agreement between simulations and measurements allows indentifying the dominant physical processes controlling the temperature dependency of the gate current. In depletion/weak inversion,...
The systematic investigation of the role played by electrons and holes during the erase operation of TANOS memories by means of charge separation experiments and physics-based simulations is reported for the first time. We determined a dominance of electrons back-tunneling in the first part of the transient, and dominance of holes in the second part. Good agreement is reached between experimental...
We present a new physical model that enables us to reproduce the digital gate current random telegraph noise fluctuations observed in ultrathin SiON dielectrics in the early stages of post-breakdown (BD). Gate current (IG) fluctuations are modeled assuming that some traps in the BD path switch between two unstable configurations, corresponding to neutral and negatively charged O vacancies. The energy...
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