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Temperature-dependent electroluminescence efficiency of blue light-emitting diodes with different well widths is investigated. The efficiency droop phenomenon for LEDs at low temperature is dependent with electron overflow and non-uniform hole distribution within MQW region.
In this study, InGaP/GaAs solar cells fabricated by a sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the sub-wavelength...
The surface nipple arrays were formed by self-assembled polystyrene nano-spheres and inductively coupled plasma etching. The light output power of the vertical-injection LEDs with nipple array shows 68% enhancement than that of without the nipple array at a driving current of 350 mA.
Conductive indium-tin-oxide (ITO) nano-whiskers were deposited on surface-textured Si solar cells using glancing-angle electron-beam deposition. With different deposited time, the ITO nano-structured layer exhibit tunable thickness, which can be related to the surface reflectance. The optimized nano-whisker surface demonstrates a broadband anti-reflective properties (R<5%), better than the traditional...
This work for the first time, experimentally demonstrates the polarization switching in 1.3-mum quantum dot VCSEL. The polarization switching in quantum dot VCSEL is achieved by adjusting the optical injection power.
Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350 mA.
The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching.
This work for the first time, experimentally investigated the linewidth enhancement factor (alpha factor) of quantum dot vertical cavity surface emitting laser. alpha factor values between 0.48 and 0.60 were measured.
InGaN micro-hole-array LEDs (μ-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of μ-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
An array of conductive Indium-Tin-Oxide (ITO) nano-columns is deposited on GaAs solar cells using the oblique-angle electron-beam deposition method. Calculations based on a rigorous coupled-wave analysis method show that such ITO nano-columns offer superior angular and spectral anti-reflective (AR) properties. The optical characteristics of the ITO nano-columns are described. The conversion efficiency...
InGaN micro-hole-array LEDs (μ-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of μ-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO2/SiO2 omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC.
A high emitting efficiency GaN-based white LED with 2D PQC on surface and PSS were successfully fabricated. After packaging, 21% enhancement in emitting luminous flux was achieved under the driving current 20 mA.
Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300 nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation.
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
Angular and spectral reflectivities of GaN nano-pillar structures are investigated for heights of 350 nm, 550 nm and 720 nm. Calculations based on rigorous coupled-wave analysis show excellent agreement with the measured reflectivities for s- and p-polarizations.
Three-pair AlGaN/GaN multiple quantum well structure with superlattice was grown using metal-organic chemical vapor deposition system. The AlGaN barrier and GaN well of the MQW were grown by atomic layer deposition and conventional growth, respectively.
This investigation experimentally demonstrates tunable slow light in a quantum well vertical-cavity surface-emitting laser at 40 GHz. Tunable optical delays are achieved by adjusting the bias current and wavelength detuning.
Photonic crystal light-emitting diodes exhibiting anisotropic light extraction efficiency have been investigated experimentally and theoretically. Images of the anisotropy in the azimuthal direction are obtained using annular structures with triangular lattice. Depending on the lattice constants, 6-fold symmetric patterns with varying number of petals are obtained.
We develop a model for the slow light in the vertical cavity surface emission lasers (VCSELs), with the combinations of cavity and the population pulsation effects. The dependences of pumping power, injection current and wavelength detuning for the group delays are demonstrated theoretically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved in the room...
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