The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345 nA/mum and Ioff=30 nA/mum at -1 V for a 50 nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow...
A new fully experimental method to determine the backscattering coefficient and the ballistic ratio of n- and p-FDSOI and multigate nanodevices is proposed in this paper. This technique is the first one that takes multisubband population, carrier degeneracy, and short channel effects into account. Owing to self-consistent Poisson-Schrodinger simulations, common assumptions such as one subband occupied...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.