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Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.
Recent progress in GaN based high electron mobility transistors (HEMTs) has revealed them to be strong candidates for future high power devices at high frequency operation. In order to extract and utilize the favorable GaN material properties, however, there are still a lot of areas to be investigated. Among them the most important is to develop new processes, structure design and characterization...
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