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In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is...
SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around 1 kV and specific on-resistances as low as RSP,ON=8.3 mOmegamiddotcm2. DC and transient characteristics are shown. Room and elevated temperature (up to 200degC) 600 V/5 A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns.
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