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A recursive model for the quasi-static current-voltage (I-V) characteristic of voltage-driven bipolar resistive RAM (RRAM) devices is reported. The model is based on the Krasnosel'skiĩ-Pokrovskiĩ hysteresis operator and accounts for the sequential creation and destruction of conductive channels spanning the dielectric film. It is shown in this work how the basic model formulation can be upgraded so...
We present radiation data, Total Ionizing Dose, Displacement Damage Dose and proton induced Single Event Effects, on the DAS Photonics SIOS optical link transceiver. These tests have been performed for a radiation prescreening helping for the selection of parts used in the transceiver. A SIOS optical link demonstration board will be flown on ALPHASAT.
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