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In modern RF BJTs and HBTs the collector is usually designed as selectively implanted collector (SIC). Therefore in the present work we investigate the influence of various SIC profiles on ft and f max with respect to BVCEO for four basic types of Si-based bipolar transistors: A SiGe HBT with a graded Ge content in the base, and second SiGe HBT having a much higher Ge content in the entire base, thus...
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