Search results for: K.F. Yarn

Items from 1 to 8 out of 8 results

chapter

On the giant optical anisotropy observed in M-plane GaN/AlGaN quantum wells by crystal-field effect

C.n. Chen, K.F. Yarn, S.h. Chang, M.l. Hung

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings > 1459 - 1461

2006 8th International Conference on Solid-State and Integrated Circuit Technology

Optical polarizations of GaN/AlGaN wurtzite quantum wells in various orientations are studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k-p finite difference scheme. The results reveal the presence of giant in-plane optical anisotropy (polarized normal to [0001]) in the M-plane (i.e. the (10...

chapter

Optimization of excimer laser annealing on low temperature polysilicon for thin film transistor applications

T.C. Cheng, W.C. Chang, K.F. Yarn, C.F. Lo, more

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings > 266 - 268

2006 8th International Conference on Solid-State and Integrated Circuit Technology

Excimer laser annealing (ELA) amorphous silicon (a-Si) to poly-silicon (poly-Si) in different gas environment, i.e. N₂ or N₂ mixed O₂:2%, is studied for the fabrication of thin film transistors (TFTs). Influence of laser power on the surface morphology, grain size and height of gibbous grain is investigated. The variation of threshold laser power for the generation of surface ablation in N₂ and N₂...

chapter

On the improvement of solar cell based photovoltaic charger system

T.c. Cheng, W.c. Chang, K.F. Yarn, J.k. Kuo

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings > 986 - 988

2006 8th International Conference on Solid-State and Integrated Circuit Technology

Due to the energy crisis, renewable energy sources have been deeply concerned as possible solutions to remain resources on the earth. Among these energy sources, solar energy, a free conversion, non-polluted and inexhaustible energy source, has been used to generate electricity for decades. However, the efficiency of solar cell is so far still low and how to make the photovoltaic chargers achieve...

article

Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant

K.F. Yarn, C.I. Liao, Y.H. Wang, M.P. Houng, more

Materials Science in Semiconductor Processing > 2005 > 8 > 4 > 550-554

Gate-recessed delta-doping Al _0.2 Ga _0.8 As/In _0.15 Ga _0.85 As enhancement-mode pseudomorphic HEMTs (E-PHEMTs) using a newly developed citric buffer etchant are reported for the first time. The innovated etchant near room temperature (23°C) possesses a high GaAs/Al _0.2 Ga _0.8 As etching selectivity (>250) applied to an etched stop surface with a root-mean-square...

article

Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

K.F. Yarn, Y.H. Wang, M.S. Chen

Materials Science & Engineering B > 1995 > 35 > 1-3 > 29-33

We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional...

article

Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

K.F. Yarn, Y.H. Wang

Thin Solid Films > 1995 > 257 > 1 > 104-109

A novel GaAs n ⁺ -n-δ(p ⁺ )-n-p ⁺ -n-δ(p ⁺ )-n-n ⁺ double heterojunction triangular barrier structure with two Al _0.3 G _0.7 As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching...

article

New structure of three-terminal GaAs p⁺-n^--δ(p⁺)-n^--n⁺ switching device prepared by molecular beam epitaxy

Y.H. Wang, K.F. Yarn, C.Y. Chan, M.S. Jame

Electronics Letters > 1987 > 23 > 17 > 873 - 874

The concept to modulate the internal barrier of a regenerative switching device is proposed. A new structure of three-terminal GaAs p⁺-n^--δ(p⁺)-n^--n⁺ switching device prepared by molecular beam epitaxy is successfully developed. The third terminal was directly contacted to the δ(p⁺) barrier using the V-groove etching technique, in which the δ(p⁺) barrier height can be directly modulated by the external...

article

Effects of the third-electrode positions on three-terminal GaAs p+n-??(p+)n-n+ switching devices

K.F. Yarn, Y.H. Wang, C.P. Liou, M.S. Jame, more

IEE Proceedings I Communications, Speech and Vision [see also IEE Proceedings-Communications] > 1987 > 134 > 4 > 129 - 136

GaAs p+n- ??(p+)n-n+ 3-terminal switching devices prepared by molecular beam epitaxy are fabricated. The positions of the third electrode are found to affect the device characteristics profoundly. The effects of 3rd-electrode positions with bias conditions are investigated in the paper. Control efficiency is then defined to compare the device performance.

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Search results for: K.F. Yarn

On the giant optical anisotropy observed in M-plane GaN/AlGaN quantum wells by crystal-field effect

Optimization of excimer laser annealing on low temperature polysilicon for thin film transistor applications

On the improvement of solar cell based photovoltaic charger system

Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant

Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

New structure of three-terminal GaAs p⁺-n^--δ(p⁺)-n^--n⁺ switching device prepared by molecular beam epitaxy

Effects of the third-electrode positions on three-terminal GaAs p+n-??(p+)n-n+ switching devices

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