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The memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved. Due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing, a large amount of oxygen vacancies are left in the HfOx layer of the TiN/Ti/HfOx/TiN stacked layer. These oxygen vacancies are crucial to make a memory device...
A novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 mum CMOS technology. By using a thin Ti layer as the reactive buffer layer into the anodic side of capacitor-like memory cell, excellent memory performances, such as low operation current (down to 25 muA), high on/off resistance ratio (above 1,000), fast switching speed (5 ns), satisfactory switching...
In this work, n-channel Multi-gate FET TiN nanocrystal memory using p+ poly-Si gate and Al2O3 high-k blocking dielectric is demonstrated with good transistor characteristics and moderate high memory window for the first time. High endurance of only 3% window narrowing after 104 P/E cycles is demonstrated. The phenomenon and mechanism of erasing-first induced retention degradation are also reported.
Satisfactory operation and reliability characteristics of SONOS-type flash devices are achieved by an optimal Hf/Al content in HfAlO charge-trapping layer. Results indicate that operation performance can be improved by a suitable band offset of HfAlO charge-trapping layer. High-speed operation can be realized by adopting CHEI programming and F-N erasing for NOR flash applications.
High-kappa HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of DeltaVtap8.1 V, an excellent endurance and a good retention (~9% charge loss at 20degC) are reported. Both program and erase speeds of DeltaVt>3 V@100 mus are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-kappa...
The high-kappa Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO2 /silicon (MAHOS) structure is proposed. The Al2O3 as a blocking oxide on high-kappa HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge...
HfO2-based dielectrics are most promising high k materials to substitute SiO2 for the MOS gate dielectric. To guarantee the deposition process under well control, an in-line inspection to characterize the thickness and uniformity of both HfO2 and Hf metal ultra-thin films must be established. In this work, we proposed an in-line, non-destructive optical method to measure thickness of both films, and...
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