The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The letter shows that gallium arsenide is a well suited material for high-frequency field-effect transistors. From preliminary measurements on realised transistors, it is shown that the frequency limit for power amplification is considerably higher than for other known transistors. The processes involved are briefly described.
Schottky-barrier field-effect transistors have been realised in silicon epitaxial films on high-resistivity silicon substrates. The 1 ?m wide gates are produced by projection-masking techniques. The maximum transconductances observed are 42 mA/V per mm gate length; the maximum frequency of oscillation fmax was 8 GHz.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.