The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We propose a two-step oxidation with high-pressure oxidation and low-temperature oxygen annealing to form ideal Ge/GeO2 stacks based on thermodynamic and kinetic control. The capacitance-voltage (C-V) characteristics of Ge/GeO2 MISCAPs with two-step oxidation revealed significant improvements of electrical properties, and the interface states density (Dit) estimated with a low-temperature conductance...
This paper will first discuss intrinsic advantages of high-pressure oxidation of Ge and then present further improvement of electron mobility in Ge n-MISFET using high-k gate stacks combined with high-pressure oxidation. The peak mobility is about 1500 cm2/Vsec, which is the highest one to date among unstrained Si and Ge MISFETs. Ge-CMOS is a strong candidate for beyond Si-CMOS.
Based on the understanding of kinetic views of GeO desorption from GeO2/Ge stacks, thermodynamic control of the qualities of both GeO2 films and GeO2/Ge interfaces was demonstrated. It was proposed to characterize the effects of GeO desorption on GeO2 by the optical absorption. In addition, MIS band alignment was also discussed from the viewpoint of the effects of metal-GeO2 interaction at the top...
We have demonstrated very high electron mobility in Ge n-MOSFETs which exceeds the universal one in Si-MOSFETs. The peak electron mobility on Ge n-MOSFETs is about 1100 cm2/Vsec in Al/GeO2/Ge stack. This has been achieved by taking care of Ge/GeO2 channel interface based on thermodynamic and kinetic control. Since it is clarified that the mobility is still limited by remaining scattering sources,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.