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Microwave assisted reactive sputtering was applied to obtain homogeneous and high optical quality ITO thin films with thickness of 50, 100, 200 and 280 nm. Electrical properties of deposited ITO thin films were measured using standard four-point probe method together with transmission spectra of ITO thin films in the wavelength range from 330 nm to 880 nm. The figure of merit calculated for all samples...
In this work thermoelectrical properties of TiO2:(Co, Pd) and TiO2:Nb thin films have been described. Thin films were performed by high energy magnetron sputtering method. Sputtering process was carried out from mosaic targets under low pressure of oxygen reactive gas. Electrical and thermoelectrical properties of as deposited and annealed at 800 K thin films were analyzed based on resistivity and...
Transparent conducting indium-tin oxide (ITO) thin films play a very important role in the field of optoelectronic devices such as photovoltaic cells and flat panel display devices. ITO films display low electrical resistance and high transmittance in the visible range of the optical spectrum. ITO thin films were deposited using a magnetron sputtering with a microwave source to improve the plasma...
In the present work usefulness of spectrophotometry and ellipsometry for the determination of different parameters of optical thin films have been discussed. The principles of their operation and some exemplary results for TiO2 thin films deposited by magnetron sputtering are presented.
In this work structural properties of TiO2 thin films doped with different amounts of Nd have been presented. Thin films were deposited on silicon substrates using high energy reactive magnetron sputtering process and for the measurements TiO2 doped with 0.84 at. % and 8.51 at. % of Nd have been selected. Diversification of the thin film surface was investigated using atomic force microscope. The...
In this paper new magnetron sputtering system for multilayers deposition has been presented. The system allows sputtering of different materials from 4 targets in low pressure of working and reactive gas (oxygen, argon, oxygen + argon). Manufactured structures can be build from films, which have gradient concentration of dopant. Also the doping process can be performed with high precision in continuous...
In this paper nanocrystalline thin films of TiO2 doped with Tb have been investigated. Thin films were deposited on different (silicon and glass) substrates using modified magnetron sputtering method named High Energy. Structural properties were examined by X-Ray Diffraction (XRD) method. The results have shown, that phase and average crystallites size of prepared thin films were determined by the...
Integration of electronics and photonics causes greater requirement for development of electrical and optical activated thin films for a new field of application known as transparent electronics. One of the key materials which is necessary for production of functional elements in transparent electronics devices are transparent oxides semiconductors (TOSs). The TOSs can be applied in many practical...
Doping of TiO2 with various metal ions can modify its different properties. In this work, structural properties of transparent Tb-doped TiO2 thin films have been outlined. Thin films were deposited by high energy reactive magnetron sputtering (HE RMS) from metallic Ti-Tb target on Si and SiO2 substrates. Thin films were investigated by means of energy disperse spectrometry (EDS), X-ray diffraction...
Transparent oxide semiconductors (TOSs) based on TiO2-doped matrix have been recently studied for their possible microelectronics applications. In the present work, TiO2 and Hf-doped TiO2 thin films were prepared by low pressure hot target reactive magnetron sputtering (LP HTRS) and deposited onto monocrystalline (100) silicon substrate. After deposition thin films were additionally annealed in air...
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