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Random telegraph signal (RTS) noise is of increasing concern for sub-100-nm flash memories. To quantitatively study the shallow trench isolation (STI) edge effect, NMOS devices with and without STI edges in the channel area are designed and analyzed. The significant impact of STI on width scaling is demonstrated and quantified. It is shown that the noise induced by STI edges dominates the RTS noise...
This work investigates the RTS noise in Flash memory from the perspective of a single cell. In this study, RTS noise in a cell is measured in the frequency domain instead of time domain to increase the efficient identification of individual RTS traps over a broader range of trap lifetime, from seconds to mus in comparison to the conventional time domain approach which typically identifies traps with...
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