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The modulation characteristics of high-performance In0.1Ga0.9N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̄1̄) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 µm long and 3 µm wide cavity was 6.1 kA/cm2 in...
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