The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
P. N. Harter, B. Bunz, K. Dietz, K. Hoffmann, R. Meyermann and M. Mittelbronn (2010) Neuropathology and Applied Neurobiology36, 623–635 Spatio‐temporal deleted in colorectal cancer (DCC) and netrin‐1 expression in human foetal brain developmentAims: Deleted in colorectal cancer (DCC) and its ligand netrin‐1 are known as axonal guidance factors, being involved in angiogenesis, migration and survival...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
An accurate large-signal model for AlGaN-GaN HEMT is presented. This model is derived from a distributed small-signal model that efficiently describes the physics of the device. An improved drain current model accounts for trapping and self-heating effects is implemented. The model shows very good results for simulating the high-power operation of a 8times125mum gate width AlGaN-GaN HEMT even beyond...
This paper proposes a measurement setup for analyzing and measuring the nonlinearity and memory effects in active power device as well as power amplifier (PA). In order to reduce the memory effect in the measurement data, new dynamic measurement setup with combination of two bias tees is developed for realizing short termination at envelope frequencies. Furthermore, for full automatic control of the...
Load and source pull measurement data has for some time now been a critical and integral part of the power amplifier design process, offering accurate performance data of the actual device that is to be used. This data can be used directly to generate graphical representations of key parameters such as output power, efficiency and gain as functions of source and load impedance, for model verification...
The influence of envelope source and load terminations on the RF performance of high power GaN amplifiers is investigated. An error-corrected two-tone measurement system has been developed enabling load- and source pull measurements in the envelope frequency bandwidth. Measured results on a 0.5 /spl mu/m-HEMT with a gate width of 8/spl times/125 /spl mu/m show a variation of 1 dB output power and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.