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In this paper, the design and measured results of a novel wideband distributed architecture GaAs FET mixer in which the LO signal is injected into the mixer through the source terminals of FETs are presented. The prototype MESFET source injected distributed mixer has a conversion gain (without IF signal amplification) varying from -8 to -3.5 dB in the range 1 to 3 GHz. It has good return losses at...