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The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 × 1015 neq/cm2 have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.
In this work the effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of unirradiated and irradiated diodes up to 6.3×1015 neq/cm2 have been measured and analyzed to give a more comprehensive understanding of the Si-bulk properties after irradiation.
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