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A single-tap concentric photogate pixel of 28 µm pitch is developed for application to time-of-flight (ToF) three dimension (3D) image sensors. The 198×108 ToF pixel array exhibits demodulation contrast higher than 50% and distance error less than 1%, over 1 to 7 m range using 20MHz modulation of 850 nm light emitting diode (LED) illumination.
A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world's largest single-die CMOS image...
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