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InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability...
III–V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III–V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers...
We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.
We review various III–V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.
A hybrid control system implemented in the DSP microprocessor TMS320F2812 is designed to globally stabilize the system for all possible initial conditions. A set of design guidelines for swing-up control and supervisory coordination has been employed in the simulation and real-time experiment. The simulation results and the real-time performance graphs are also presented.
We report the effect of V/III ratio and nanowire diameter on the crystal structure and optical properties of InP nanowires. Time -resolved photoluminescence studies have revealed that wurtzite nanowires show longer carrier lifetimes than zinc-blende ones.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
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