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Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl2/H2/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP...
ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ∼0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface...
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
III–V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III–V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers...
We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of comparative studies of devices made with and without oxide-insulated gates to establish whether this leads to a significant enhancement in device...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation...
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