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Stress induced leakage currents (SILC) are one of the most important reliability problems in present day CMOS technology. We have developed a new approach to SDT which exploits advantages provided by extremely thin (??1.2nm) dielectrics. The enormous difference between the high capacitance of the thin dielectric and the much smaller capacitance of the Si depletion layer allows application of a modest...
We demonstrate voltage controlled spin dependent tunneling in 1.2 nm effective oxide thickness silicon oxynitride films. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way in materials of great technological importance. We obtain defect energy level resolution by exploiting the enormous difference between the capacitance of the very thin...
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