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In this work, a 100 nm Ni layer was deposited on both Si-face and C-face of n-type doped low resistive (<30 mOmega-cm) 4H-SiC wafers by means of E-beam evaporation in a vacuum of the order of 10-7 Pa. These layer were patterned to form circular contacts and were cut in pieces to perform RTP annealing at different temperatures (800-1000 degC) in Ar ambient followed by I-V measurements to compare...
Silicon carbide electronic devices are already commercially available in a few application areas such as high voltage rectifiers and emerging RF power amplifiers. Over the past 15 years a very rapid progress of both materials and device quality has been seen and is very encouraging for the near future application market. Prototype devices show amazing improvement each year in all device categories...
Epitaxial silicon carbide bipolar junction transistors (BJTs) for power switching applications have been designed and fabricated with a maximum breakdown voltage of 1100 V. The BJTs have high common emitter current gains with maximum values exceeding 60, a result that is attributed to design optimization of the base and emitter layers and to a high material quality obtained by a continuous epitaxial...
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