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The effects of the integration of two major PFET performance enhancers, embedded SiGe (e-SiGe) junctions and compressively stressed nitride liner (CSL) have been examined systematically. The additive effects of e-SiGe and CSL have been demonstrated, enabling high performance PFET (drive current of 640 muA/mum at 50 nA/mum off state current at 1V) with only modest Ge incorporation (~20 at. %) in S/D...
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