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4H-SiC RF bipolar junction transistors (BJTs) have been designed and tested at 425 MHz. Twenty four cells representing approximately 24 inches of emitter periphery were packaged and tested at 425 MHz in common emitter, Class C mode with a 75 V power supply voltage. The pulse width was 2 mus and duty cycle 1%. The total output power was measured to be 2100 W with a power gain of 6.3 dB, collector efficiency...
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