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Scalability of the 28nm gate-first high-k/metal gate (HK/MG) LP devices with maintaining the performance and layout flexibility was comprehensively studied for the first time. We demonstrated the N-/PFET drive current (Idsat) of 0.86/0.46 mA/µm with the off-leakage current (Ioff) of 1 nA/µm for the supply voltage (Vdd) of 1V by the simple method suitable for scaling the circuit area whereas the local...
We have developed operational tuneable dispersion compensator that has a tuning range of /spl plusmn/1000 ps/nm based on ring resonator using high-/spl Delta/ PLC technology. We have realized 1050 ps/nm dispersion compensation at 16 WDM channels simultaneously.
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