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The demonstration of device structure incorporating an ultrathin AlGaN barrier capped with a thin AlN layer in the source-drain access region to maintain high 2DEG charge, with a gate opening formed by selective wet etching of the AlN using heated photoresist is reported. AlN/AlGaN/GaN layer structures are grown on a-plane Al2O3 substrates by metalorganic chemical vapour deposition. In conclusion,...
A novel device structure incorporating an ultrathin AlGaN barrier layer capped by an AlN layer in the source-drain access regions has been implemented to reliably control threshold voltage in AlGaN/GaN high-electron-mobility transistors. A recessed-gate structure has been used to decrease 2-D electron gas (2DEG) density under the gate, thus controlling threshold voltage while maintaining low on-resistance...
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