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Analytical predictions of additive noise in combined amplifiers and their experimental verification are presented. The analysis addresses both random and deterministic noise processes, and in each case the signal-to-noise ratio of combined amplifiers is compared to that of an individual amplifier inside the combiner. The signal-to-noise ratio of combined amplifiers improves for uncorrelated random...
A low noise GaAs FET oscillator circuit is presented. It uses a single dielectric resonator both in the oscillator feedback circuit and as the dispersive element of a discriminator in a frequency locked loop used for noise degeneration. An FM noise level of -120 dBc/Hz at 10 kHz offset was measured at X-band.
A low noise frequency agile X-band source designed for a missile seeker Master Oscillator is presented. The source consists of a push-push X-band VCO phase-locked to a single crystal oscillator using a sampling phase detector. The performance of the source is presented under static conditions and the severe missile vibration environment.
The pulsed operation of X-band amplifiers using 4.8 mm power FETs resulted in a nominal output power improvement of 2 dB when operated at elevated drain voltages of up to 18 volts. An ouptut power of 6 W peak with 6 dB gain at 10 GHz was obtained from a balanced amplifier.
Via hole source connections together with on-carrier matching significantly improve X-band power FET performance. Via hole connections eliminate spurious oscillations by reducing common-lead source inductance. On-carrier matching networks improve the power and gain of X-band FET amplifiers by partially matching the very low input and output impedance of large periphery devices with impedance transformation...
The experimental and predicted performance of the new broadband planar N-way combiner/divider is presented. The advantage of this combiner/divider over those previously published is that it can be realized in a planar structure. Experimental data on the planar combiner/divider for N=4 and N =7 indicates an average isolation of 20 dB between the N ports from 8 to 12 GHz, and compares favorably with...
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