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The gate-to-source capacitance ($C_{\mathrm {GS}})$ in the p-channel tunnel FET (pTFET) with a Ge epitaxial tunnel layer (ETL) structure is investigated. The characteristic of $C_{\mathrm {GS}}$ is revealed and studied with various frequencies and temperatures. Due to the highly efficient band-to-band tunneling (BTBT) in the Ge ETL pTFET, the minority carriers for the source can be generated by...
In this work, we propose a simple method to form uniform carbon nanotube network (CNTN) in wafer-scale, which is completely compatible to thin-film transistors (TFTs) process and can achieve large-area uniformity and stable device performance. From the plot of on-current versus off-current, it is clear that devices with various dimensions are divided into two groups, and the threshold value for these...
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