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A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an f/sub T/ and f/sub max/ of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained from ring oscillator measurements. A divide-by-eight prescaler circuit clocks at 12.5 GHz.<<ETX>>
High gain ( beta =175)3*10 mu m/sup 2/ GaInP/GaAs HBTs fabricated using a triple mess etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 mu A. Microwave measurements indicate the devices have 35 GHz f/sub t/ and 26 GHz f/sub max/.<<ETX>>
A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.
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