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Methods for the quantitative analysis of very thin (delta) layers and sharp interfaces in semiconductors, differentiating between features close to or consisting of changes in matrix composition, and dilute features are reviewed. Although it is shown that no method currently exists for accurate quantification in the former case, a number of experimental techniques for obtaining the best estimate...
Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.<<ETX>>
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