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A two finger interdigitated metal-semiconductor-metal detector has been made using high-resistance Fe-implanted In/sub 0.53/Ga/sub 0.47/As material grown on InP:Fe. The fingers are 30 mu m long with 1 mu m width and 1.5 mu m separation. The breakdown voltage of the device is 5V. At 2 V bias, the device has a dark current of 250 nA and a DC responsivity of 0.375 A/W at 1.3 mu m. The full width at half...