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Experimental results on operating submicrometre lateral bipolar transistors at cryogenic temperatures are reported. These devices, fabricated in standard micrometre CMOS technology, were found to operate satisfactorily with high current gain down to 10 K, which was the lowest temperature tested. This device is of interest in circuits interfacing with log wave infrared detectors and other low-impedance...
The authors describe a submicron BiMOS process in which the lateral BJTs (bipolar junction transistors) are so similar to the MOSFETs that no extra process steps are needed. A lateral npn BJT with beta higher than 1000 has been demonstrated. A lateral pnp BJT with high cutoff frequency has been demonstrated, provided the parasitic capacitances are minimized. It is believed that this lateral BJT can...
A novel local interconnect technology utilizing polysilicon strapped with selective CVD (chemical vapor deposition) tungsten (W) has been developed for advanced CMOS applications. Problems associated with etching of a local interconnect material do not exist, since the local interconnects are of polysilicon and defined at the same level as the gate electrodes. CVD W deposited on the polysilicon serves...
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