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InSb n-channel enhancement mode MISFETs have been fabricated in homoepitaxial material grown by molecular beam epitaxy. Silicon doping during growth of the epitaxial layers was used to form the source and drain junctions. The output characteristics are of the classical type, with a maximum g/sub m/ of 12 mS/mm, corresponding to a surface electron mobility of 3-4*10/sup 4/ cm/sup 2//Vs at liquid nitrogen...