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OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200??C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric...
Qualities of oxynitrides prepared by annealing O/sub 2/- and N/sub 2/O-grown oxides in NO ambient are investigated. Harder oxide/Si interface, less charge trapping and higher charge-to-breakdown characteristics are observed in NO-annealed N/sub 2/O-grown (N2ONO) oxynitride than NO-annealed O/sub 2/-grown (O2NO) oxynitride. The involved mechanism lies in higher interfacial nitrogen concentration and...
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