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We describe the metalorganic chemical vapor deposition and patterning by electron beam lithography and selective area growth or wet chemical etching of quantum dot and inverted quantum dot (nanopore) structures suitable for diode lasers.
This study demonstrates the use of electronically coupled patterned quantum dots (QDs) fabricated using a wet-etching technique as the gain medium of a photonic device. This technique provides the unique ability to control both the spatial and spectral properties of QDs, while maintaining the high optical quality of the material necessary for photonics applications.
We discuss two approaches for current injected photonic crystal defect membrane emitters. A vertical pn junction using spatially selective gain is reported as well transverse pn junctions created using selective ion implantation.
The strict TM polarization dependence of intersubband absorption is relaxed in a nanopore lattice in which TE absorption is also allowed. By controlling the nanopore geometry, one can in principle achieve control over the polarization dependence of intersubband absorption. This has potential applications in various types of intersubband devices and in particular quantum well infrared photodetectors.
The self-assembly method of forming QDs, although well established as a reliable growth technique, does not allow explicit control over the size and position of each QD. The large size variation of these QDs typically results in significant inhomogeneous broadening, diminishing the potential advantages of their use in optoelectronic devices such as low threshold current density, narrow gain bandwidth,...
The structures, processing methods and challenges, experimental results, and spectral analyses for patterned quantum dot lasers and nanopore ordered array lasers are presented and compared with otherwise identical quantum well laser diodes.
The structures, processing methods and challenges, experimental results, and spectral analyses for patterned quantum dot lasers and nanopore ordered array lasers are presented and compared with otherwise identical quantum well laser diodes.
An analytical model describing the density of states and gain spectrum of the ordered nanopore array diode laser is presented. The theoretically predicted gain spectrum shows excellent agreement with experimental results.
Multiple wavelength sources are of interest in optical communications, optical data processing, spectroscopy, and RF and THz generation by optical heterodyning. Our results demonstrate a tunable dual-wavelength source consisting of two surface-etched distributed Bragg reflector (DBR) lasers with outputs combined by a y-branch coupler, suitable for optical heterodyning. The integrated device presented...
We address the growth, characterization, and rationale for patterned quantum dot lasers those structures in which arbitrary size and distribution profiles are possible within some limits.
The ordered nanopore array laser diode is a structure which exhibits three-dimensional carrier confinement similar to quantum dot lasers without the undesirable effects of spatially disconnected carrier pools. Simulation and experimental results will be presented.
The relationship between the physical fabrication of asymmetric cladding surface etched DBR structures and the resulting optical characteristics are characterized. The effective index step and DBR scattering loss for these structures is determined.
We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam lithography and selective area epitaxy techniques. Photoluminescence data showing emission at 1250 nm is presented.
Summary form only given. Here we report an initial system design for a scaleable all-diode-pumped master oscillator power amplifier (MOPA) water vapor differential absorption lidar (DIAL) system operating in the 940-nm water vapor band. The master oscillator consists of a novel three element distributed Bragg reflector laser devices at 1.006 /spl mu/m fabricated in the same semiconductor material...
Summary form only given. Recently, lasers with monolithically integrated external modulators fabricated using selective-area epitaxy in the InGaAs-InGaAsP material system have received much attention for applications in long distance fiber communication. As of yet little work has been done on lasers with monolithically integrated modulators in the InGaAs-GaAs material system. Applications for lasers...
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