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We present light emitting diode with two-dimensional photonic crystal structure prepared by interference lithography in the light emitting diode surface with an emission maximum at 845 nm. Applied two-dimensional photonic crystal structure improved light extraction efficiency for more than 30 %. The photonic crystal light emitting diode surface morphology was analyzed by atomic force microscope. The...
Great advances in the development of III-V diluted magnetic semiconductors materials (DMS) allow for the incorporation of ferromagnetic epitaxial layers into advanced structures. In this contribution, we report on the growth of GaAs/InMnAs layers by metalorganic vapour phase epitaxy (MOVPE) over an AlGaAs/GaAs MQW light-emitting diode structure. In particular, results of electrical and structural...
We have studied the surface structure of ordered In x Ga 1-x P organometallic vapour phase epitaxy (OMVPE)-grown layers using optical microscopy, atomic force microscopy (AFM), and synchrotron topography. The layers were intentionally lattice mismatched (0.388=<x In =<0.552), and they exhibited a surface structure with three basic features. The first one...
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