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Heteroepitaxy of silicon germanium (SiGe) prepared on a sapphire substrate (Al2O3) requires scrupulous attention to growth conditions. Previous work was used a substrate temperature of 890°C to grow a SiGe (111) film on the trigonal sapphire (0001) substrate without twin defects. Although the growth conditions were effective for the formation of single crystal film, how the formation of SiGe at the...
We determine the atomic surface structure of the Bi-terminated GaAs(001) (1×3) reconstruction for the first time using scanning probe microscopies, photoemission spectroscopy, and ab initio calculations. The proposed kinked-dimer (4×3) model is consistent with experimental characterization and can accommodate a variety of species configurations due to an availability of low-energy sites for Bi substitution,...
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