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Tri-halide vapor phase epitaxy (THVPE) of thick GaN using GaCl3 was investigated for fabricating low-cost, high-crystalline-quality GaN substrates instead of the conventional manufacturing method of GaCl-based hydride vapor phase epitaxy (HVPE). The growth rate and upper growth temperature limit of GaN using THVPE were found to be much higher than those obtained using conventional HVPE under the same...
Carbon films were prepared from polyimide films (Kapton and Upilex-s with thickness of 50μm) by heat treatment at 750°C under Ar atmosphere. The electrical resistance of the carbon films was remarkably increased with the adsorption of acetone and decreased with its desorption. The magnitude of the resistance change increased with increasing vapor pressure of acetone and with decreasing temperature...
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