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Cubic silicon carbide (3C-SiC) has been grown on Si (111) substrate by chemical vapor deposition. The crystal quality of SiC with the SiCN buffer layer is obviously improved comparing with that grown on the SiC buffer layer. The SiCN film, composed of elemental Si and SiC1-xNx alloy, is formed by the constant-source diffusion of the C and N atoms into the Si substrate. During the 3C-SiC high temperature...
The SiCN film, which has the same crystal structure as 3C-SiC verified by X-ray diffraction and Raman scattering, has been formed on Si (111) substrate by constant-source diffusion using a chemical vapor deposition system. Via X-ray photoelectron spectroscopy, the film has been identified as the mixture of elemental Si and SiC1−xNx alloy, with the SiC1−xNx content decreases from 87.4% to 17.9% and...
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