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An X-band 50 W GaN power amplifier (PA) is presented, mainly focusing on its impedance-matching networks to realize a specified operating bandwidth of 18%. Bandpass impedance-matching networks (IMNs) with Chebyshev response are adopted in the PA, where a FET and a pre-matching transmission line can be approximately seen as a shunt parallel-resonant circuit. Mismatch-loss ripple of the Chebyshev IMN...
In this paper, an internally-matched GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. The internal matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 70% was successfully obtained with 7W output power at 5.8GHz. All matching circuit is in a hermetically sealed package and no external...
A 12-GHz low noise MIC amplifier with 0.86 dB noise figure has been developed. Taking into account the waveguide connection to the antenna system, the amplifier is constructed of waveguide-to-microstrip transition sections and a RF circuit section using the packaged FETs on the same substrate. The RF circuit is covered with damp proof material and the circumference of the substrate is applied with...
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