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An X-band 50 W GaN power amplifier (PA) is presented, mainly focusing on its impedance-matching networks to realize a specified operating bandwidth of 18%. Bandpass impedance-matching networks (IMNs) with Chebyshev response are adopted in the PA, where a FET and a pre-matching transmission line can be approximately seen as a shunt parallel-resonant circuit. Mismatch-loss ripple of the Chebyshev IMN...
In this paper, we discuss change of read range between a UHF passive RFID tag and reader when a tag is close to another tag. The read range is determined by the strength of forward link and reverse link, which are represented by received power at a tag and reader, respectively. Approaching of tags causes electromagnetic interference between antennas of tags and results in change in impedance matching...
In this paper, a broadband high efficiency amplifier is proposed, which uses both short and open circuited stubs for simultaneous broadband impedance matching for fundamental frequency and 2nd-harmonic. The developed GaN HEMT amplifier with 16 mm gate periphery has achieved over 60 W output power with over 50% drain efficiency (over 45% power-added-efficiency) across 15% relative bandwidth at C-Band...
A 12-GHz low noise MIC amplifier with 0.86 dB noise figure has been developed. Taking into account the waveguide connection to the antenna system, the amplifier is constructed of waveguide-to-microstrip transition sections and a RF circuit section using the packaged FETs on the same substrate. The RF circuit is covered with damp proof material and the circumference of the substrate is applied with...
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