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In this paper, the potential and the experimental results of high power Schottky barrier diodes on epitaxial diamond films have been presented. Increase of the Schottky barrier height improves reverse operation limit up to 3.1 MV/cm, which value is higher than the Emax of SiC. The reverse leakage current of the diamond SBDs is kept low as 10-4 A/cm2 at 415 K. Low on-resistance with good metal/diamond...
Diamond is a promising material for high-power and low-loss semiconductor devices. However, the reported reverse blocking electric field of diamond-based power devices is as low as 2 MV/cm, and their performance is worse than ideal. We have developed reach-through-type Schottky barrier diodes (SBDs) with various Schottky barrier heights (SBHs) by changing metals. SBDs with high SBH show low leakage...
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